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| Semiconductor SM5427-H / SM5427-H(B) High Brightness LED Lamp Features * * * * * * Green colored transparency lens type 5mm(T-13/4) all plastic mold type High efficiency led lamp High luminosity Flangeless package Low power consumption Application * Full color displays * Message boards Outline Dimensions unit : mm STRAIGHT TYPE STOPPER TYPE 4.60.2 4.60.2 7.70.2 7.70.2 3.60.5 0.5 22.0 MIN 0.5 22.0 MIN 1.0 MIN 2.54 NOM 2.54 NOM 1.0 MIN PIN Connections 1.Anode 2.Cathode TENTATIVE 1 SM5427-H / SM5427-H(B) Absolute maximum ratings Characteristic Power Dissipation Forward Current * Peak Forward Current Reverse Voltage Operating Temperature Storage Temperature 2 1 Symbol PD IF IFP VR Topr Tstg Ratings 110 30 50 4 -2585 -30100 Unit mW mA mA V 260 for 5 seconds * Soldering Temperature Tsol *1.Duty ratio = 1/16, Pulse width = 0.1ms *2.Keep the distance more than 2.0mm from PCB to the bottom of LED package Electrical Characteristics Characteristic Forward Voltage Luminous Intensity Peak Wavelength Spectrum Bandwidth Reverse Current Symbol VF IV Test Condition IF= 20mA IF= 20mA IF= 20mA IF= 20mA VR=4V X Y IF= 20mA Min. 68 - Typ. 2.2 120 570 30 17 35 Max. 2.8 155 10 - Unit V mcd nm nm uA deg P IR 1/2 *3Half angle *3. 1/2 is the off-axis angle where the luminous intensity is 1/2 the peak intensity TENTATIVE 2 SM5427-H / SM5427-H(B) Characteristic Diagrams Fig. 1 IF - VF Fig. 2 IV - IF Forward Voltage VF [V] Luminous Intensity Iv [mcd] Forward Current IF [mA] Forward Current IF [mA] Fig. 3 IF - Ta Fig.4 Spectrum Distribution Current IF [mA] Forward Relative Intensity [%] Ambient Temperature Ta [] Wavelength [nm] Fig. 5-1 Radiation Diagram(X) Fig. 5-2 Radiation Diagram(Y) 100 50 0 50 100 100 50 0 50 100 Relative Luminous Intensity Iv [%] Relative Luminous Intensity Iv [%] TENTATIVE 3 |
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